@article{Wang_Pang_Cheng_Han_Li_Meng_Ibarlucea_Zhao_Yang_Liu_Liu_Zhou_Wang_Rummeli_Zhang_Cuniberti_2021, title={Applications of 2D-Layered Palladium Diselenide and Its van der Waals Heterostructures in Electronics and Optoelectronics}, volume={13}, url={https://www.nmlett.org/index.php/nml/article/view/909}, DOI={10.1007/s40820-021-00660-0}, abstractNote={<p>The rapid development of two-dimensional (2D) transition-metal dichalcogenides has been possible owing to their special structures and remarkable properties. In particular, palladium diselenide (PdSe<sub>2</sub>) with a novel pentagonal structure and unique physical characteristics have recently attracted extensive research interest. Consequently, tremendous research progress has been achieved regarding the physics, chemistry, and electronics of PdSe<sub>2</sub>. Accordingly, in this review, we recapitulate and summarize the most recent research on PdSe<sub>2</sub>, including its structure, properties, synthesis, and applications. First, a mechanical exfoliation method to obtain PdSe<sub>2</sub> nanosheets is introduced, and large-area synthesis strategies are explained with respect to chemical vapor deposition and metal selenization. Next, the electronic and optoelectronic properties of PdSe<sub>2</sub> and related heterostructures, such as field-effect transistors, photodetectors, sensors, and thermoelectric devices, are discussed. Subsequently, the integration of systems into infrared image sensors on the basis of PdSe<sub>2</sub> van der Waals heterostructures is explored. Finally, future opportunities are highlighted to serve as a general guide for physicists, chemists, materials scientists, and engineers. Therefore, this comprehensive review may shed light on the research conducted by the 2D material community.</p> <p>Highlights:</p> <p>1 The structure–property relationship of PdSe<sub>2</sub> is discussed, i.e., layer number vs. tunable bandgap, pentagonal structure vs. anisotropy-based polarized light detection.<br>2 The synthesis approaches of PdSe<sub>2</sub> are thoroughly compared, including bottom-up methods such as chemical vapor transport for bulk crystals, chemical vapor deposition for thin films and single-crystal domains, selenization of Pd films. Besides, top-down strategies are discussed, covering the mechanical exfoliation of bulk crystals, plasma thinning, and vacuum annealing as well as phase transition.<br>3 The emerging devices of PdSe<sub>2</sub> and its van der Waals heterostructures have been delivered such as metal/semiconductor contact, Schottky junction transistors, field-effect transistors, photodetectors, p–n junction-based rectifiers, polarized light detector, and infrared image sensors.<br>4 Future opportunities of PdSe<sub>2</sub>-based van der Waals heterostructures are given including logic gate-based digital circuits, RF-integrated circuits, Internet of Things, and theoretical calculation as well as big data for materials science.</p>}, journal={Nano-Micro Letters}, author={Wang, Yanhao and Pang, Jinbo and Cheng, Qilin and Han, Lin and Li, Yufen and Meng, Xue and Ibarlucea, Bergoi and Zhao, Hongbin and Yang, Feng and Liu, Haiyun and Liu, Hong and Zhou, Weijia and Wang, Xiao and Rummeli, Mark H. and Zhang, Yu and Cuniberti, Gianaurelio}, year={2021}, month={Jun.}, pages={143} }