TY - JOUR AU - Shoaib, Muhammad AU - Wang, Xiaoxia AU - Zhang, Xuehong AU - Zhang, Qinglin AU - Pan, Anlian PY - 2018/06/23 Y2 - 2024/03/29 TI - Controllable Vapor Growth of Large-Area Aligned CdSxSe1−x Nanowires for Visible Range Integratable Photodetectors JF - Nano-Micro Letters JA - Nano-Micro Lett VL - 10 IS - 4 SE - Articles DO - 10.1007/s40820-018-0211-7 UR - https://www.nmlett.org/index.php/nml/article/view/260 SP - 58 AB - <p>The controllable growth of large area band gap engineered-semiconductor nanowires (NWs) with precise orientation and position is of immense significance in the development of integrated optoelectronic devices. In this study, we have achieved large area in-plane-aligned CdS<sub><em>x</em></sub>Se<sub>1−<em>x</em></sub> nanowires via chemical vapor deposition method. The orientation and position of the alloyed CdS<sub><em>x</em></sub>Se<sub>1−<em>x</em></sub> NWs could be controlled well by the graphoepitaxial effect and the patterns of Au catalyst. Microstructure characterizations of these as-grown samples reveal that the aligned CdS<sub><em>x</em></sub>Se<sub>1−<em>x</em></sub> NWs possess smooth surface and uniform diameter. The aligned CdS<sub><em>x</em></sub>Se<sub>1−<em>x</em></sub> NWs have strong photoluminescence and high-quality optical waveguide emission covering almost the entire visible wavelength range. Furthermore, photodetectors were constructed based on individual alloyed CdS<sub><em>x</em></sub>Se<sub>1−<em>x</em></sub> NWs. These devices exhibit high performance and fast response speed with photoresponsivity ~ 670&nbsp;A&nbsp;W<sup>−1</sup> and photoresponse time ~ 76&nbsp;ms. Present work provides a straightforward way to realize in-plane aligned bandgap engineering in semiconductor NWs for the development of large area NW arrays, which exhibit promising applications in future optoelectronic integrated circuits.</p><p>Highlights:</p><p>1 The growth of tunable composition-directional CdS<sub>x</sub>Se<sub>1−x</sub> nanowires was successfully realized by controllable chemical vapor deposition using graphoepitaxial effect.<br>2 Photodetectors based on CdS<sub>x</sub>Se<sub>1−x</sub> nanowires with different compositions covering the visible spectral range on faceted M-plane substrate were constructed.<br>3 The as-grown nanowires not only exhibited superior optical properties such as strong emission and perfectly aligned waveguide but also demonstrated high-performance photodetection as compared to previous single crystalline CdSSe photodetectors.</p> ER -