Issue

Vol. 18 (2026)

Low-Dimensional Materials for Future Transistors

https://doi.org/10.1007/s40820-026-02142-7
Shuohua Zhang
School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People’s Republic of China
Zhihan Hong
School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People’s Republic of China
Mingjun Ren
School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People’s Republic of China
Limin Zhu
School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People’s Republic of China
Jing Wang
School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People’s Republic of China

Corresponding Author: Jing Wang

juw6@sjtu.edu.cn

Nano-Micro Letters, Vol. 18 (2026), Article Number: 296

Abstract

The scaling of transistors is approaching its physical limits, making the future direction of transistor development a topic of global significance. Low-dimensional materials (LDMs), which exhibit superior properties compared to bulk materials, are emerging as a driving force for transformative advancements across various industries. What do LDMs signify for the future of transistors? Where do the challenges and opportunities lie? This perspective concludes with an overview of the transistor development roadmap, highlighting key technological milestones for LDMs, and proposes three pathways for integrating LDMs into future transistors across near-, mid-, and long-term horizons.

Keywords

Low-dimensional materials Transistor scaling Post-Moore Lab-to-fab translation Future transistor
Zhang, Shuohua, Zhihan Hong, Mingjun Ren, Limin Zhu, and Jing Wang. 2026. “Low-Dimensional Materials for Future Transistors”. Nano-Micro Letters 18 (March):296. https://doi.org/10.1007/s40820-026-02142-7.
Download Citation
Endnote/Zotero/Mendeley (RIS)
BibTeX
References
  1. W. Cao, H. Bu, M. Vinet, M. Cao, S. Takagi et al., The future transistors. Nature 620(7974), 501–515 (2023). https://doi.org/10.1038/s41586-023-06145-x
  2. K.S. Kim, J. Kwon, H. Ryu, C. Kim, H. Kim et al., The future of two-dimensional semiconductors beyond Moore’s law. Nat. Nanotechnol. 19(7), 895–906 (2024). https://doi.org/10.1038/s41565-024-01695-1
  3. C. Liu, Y. Jiang, B. Shen, S. Yuan, Z. Cao et al., A full-featured 2D flash chip enabled by system integration. Nature 646(8087), 1081–1088 (2025). https://doi.org/10.1038/s41586-025-09621-8
  4. International Roadmap for Devices and Systems (IRDS) 2024 Edition (IEEE, 2024). https://irds.ieee.org/editions/2024
Read More
Author biographies are not available.
Download this PDF file
PDF

Most read articles by the same author(s)

<< < 1 2