Issue

Vol. 19 (2027)

Charge-Carrier Behavior and Molecular Interface Engineering in Perovskite Light-Emitting Diodes

https://doi.org/10.1007/s40820-026-02348-9
Xiaojuan Cao
School of Electronics and Electrical Engineering, and State Key Laboratory of New Textile Materials and Advanced Processing, Wuhan Textile University, Wuhan 430200, People’s Republic of China
Yao Chen
School of Electronics and Electrical Engineering, and State Key Laboratory of New Textile Materials and Advanced Processing, Wuhan Textile University, Wuhan 430200, People’s Republic of China
Yongkang Tang
School of Electronics and Electrical Engineering, and State Key Laboratory of New Textile Materials and Advanced Processing, Wuhan Textile University, Wuhan 430200, People’s Republic of China
Hong Tao
Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Wuhan Institute of Technology, 206 Guanggu 1 st Road, Wuhan 430205, People’s Republic of China
Songzhan Li
School of Electronics and Electrical Engineering, and State Key Laboratory of New Textile Materials and Advanced Processing, Wuhan Textile University, Wuhan 430200, People’s Republic of China
Akhtam Amonov
Department of Optics and Spectroscopy, Engineering Physics Institute, Samarkand State University, University boulevard 15, 140104 Samarkand, Uzbekistan
Guojia Fang
School of Electronics and Electrical Engineering, and State Key Laboratory of New Textile Materials and Advanced Processing, Wuhan Textile University, Wuhan 430200, People’s Republic of China
Fang Yao
School of Electronics and Electrical Engineering, and State Key Laboratory of New Textile Materials and Advanced Processing, Wuhan Textile University, Wuhan 430200, People’s Republic of China

Corresponding Author: Fang Yao

fangy@whu.edu.cn

Nano-Micro Letters, Vol. 19 (2027), Article Number: 52

Abstract

Molecular interface engineering has become increasingly important for improving the efficiency and stability of perovskite light-emitting diodes (PeLEDs). Although highly emissive perovskite materials have advanced rapidly, their translation into high-performance devices remains limited by interfacial losses, unbalanced charge injection, and instability under electrical operation. In this review, we first discuss charge-carrier behavior in perovskite materials and devices, with emphasis on radiative and non-radiative recombination, carrier accumulation under injection, and the device-level consequences of interfacial constraints. We then examine the development of interfacial molecular strategies in PeLEDs, including self-assembled monolayers and related interfacial molecules, and summarize how such molecular layers influence charge injection, interfacial recombination, local electronic structure, and film formation at both charge-injection interfaces. On this basis, we further consider the implications of these interfacial effects for molecular regulation in light-emitting devices, with particular attention to electronic regulation under bias, chemically persistent passivation, and structural compatibility with emissive-layer formation. By connecting carrier physics, interfacial function, and molecular regulation, this review aims to provide a clearer framework for understanding and developing molecular interfacial strategies for high-performance PeLEDs.


Highlights:
1 Establishes a carrier-behavior-driven framework linking high-injection recombination, interfacial carrier crowding, and efficiency roll-off in perovskite light-emitting diodes (PeLEDs).
2 Reveals how interfacial molecules, with self-assembled monolayers as a representative class, regulate charge balance, interfacial recombination, local electronic structure, and bottom-interface crystallization.
3 Distills practical molecular design principles for high-performance PeLEDs, with emphasis on electronic regulation under bias, persistent passivation, and structural compatibility.

Keywords

Self-assembled monolayer Interface Carrier injection Exciton quenching Perovskite light-emitting diodes
Cao, Xiaojuan, Yao Chen, Yongkang Tang, Hong Tao, Songzhan Li, Akhtam Amonov, Guojia Fang, and Fang Yao. 2026. “Charge-Carrier Behavior and Molecular Interface Engineering in Perovskite Light-Emitting Diodes”. Nano-Micro Letters 19 (October):52. https://doi.org/10.1007/s40820-026-02348-9.
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